This paper reports improvements in the electrical and optical properties of blue-emission gallium nitride (GaN)-based thin-film light-emitting diodes (TFLEDs) after laser-based Si …

Low-temperature deposited gallium nitride (GaN) thin-films have been introduced into planar perovskite solar cells (PSCs) as electron transport layers (ETLs) for the first time. ... Plasma-enhanced atomic-layer-deposited gallium nitride as an electron transport layer for planar perovskite solar cells H. Wei, J. Wu, P. Qiu, S. Liu, Y. He, M ...

TI's new 100V integrated gallium nitride (GaN) power stages feature thermally enhanced dual-side cooled package technology to simplify thermal designs and achieve the highest power density in mid-voltage applications at more than 1.5kW/in 3. TI's new 1.5W isolated DC/DC modules with integrated transformers are the industry's …

1 INTRODUCTION. Solar cells of ternary alloys such as indium gallium nitride (InGaN) are attracting interest due to the tunable direct band gap energy of InGaN covering the whole solar spectrum ranging from 0.7 eV (band gap energy of InN) to 3.4 eV (band gap energy of GaN), 1, 2 as well as superior photovoltaic characteristics of InGaN …

SYRACUSE, N.Y., APRIL 30, 2020 – Not only is the AN/TPQ-53 system the most modern radar deployed by the U.S. Army, it is now poised to be the first and only Army radar system operating with Gallium Nitride (GaN). "Lockheed Martin (NYSE: LMT) recently delivered the first Q-53 system to the U.S. Army equipped with GaN," said Mark Mekker, director, …

GaN Basics: FAQs. Oct. 2, 2013. Gallium nitride transistors have emerged as a high-performance alternative to silicon-based transistors, thanks to the technology's ability to be made allow smaller ...

The synthesis of gallium nitride nanowires (GaN NWs) by plasma enhanced chemical vapor deposition (PECVD) are successfully …

Indium gallium nitride (InGaN)-based micro-LEDs (μLEDs) are suitable for meeting ever-increasing demands for high-performance displays owing to their high efficiency, brightness and stability 1 ...

Gallium nitride (GaN) is a wide bandgap semiconductor which has rapidly transformed the world by enabling energy-efficient white light-emitting diodes and promising energy-efficient power electronic devices. Bulk crystal growth is actively being researched to enable inexpensive large-area substrates. ... enhanced light extraction efficiency ...

U.S. Department of Energy Extends Commitment to Enhanced Semiconductors Through PowerAmerica Institute Renewal ... Silicon carbide (SiC) and gallium nitride (GaN) WBG semiconductor technology makes the power electronic modules significantly more powerful and energy efficient than those made from …

Codoping of gallium nitride for improved acceptor ionization has long been theorized; however, reduction to practice proves difficult via growth. ... The enhanced hole concentrations evident with oxygen incorporation reveal important considerations for device design given unintentional doping during growth and future incorporation of ion ...

Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal characteristics for Power Electronics applications. These WBG devices make it possible the development of more efficient converters with higher power densities. In contrast to Silicon Carbide (SiC) devices, Gallium Nitride (GaN) devices are several steps behind in terms …

This work demonstrates the feasibility and potential of GaN films as ETLs in planar PSCs. Low-temperature deposited gallium nitride (GaN) thin-films have been introduced into …

Impact Statement: This work demonstrates photo-enhanced ferromagnetism at room temperature in gallium nitride. This is significant because the material maintains enhancement for long periods of time (>8 hours), can support two-photon coherent control, and is based in a scalable solid-state platform. It is then proposed that …

Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride Jialing Yang; Jialing Yang Department of Physics, ... were prepared by plasma-enhanced atomic layer deposition on Ga- or N-face GaN and annealed in N 2 ambient to investigate the effect of the …

1. In the present paper we review the most recent degradation modes and mechanisms recently observed in AlGaN/GaN. (Aluminum Gallium Nitride Gallium Nitride). High Electron-Mobility Transistors ...

Porous gallium nitride (PGaN) layers are significant building blocks in light-emitting diodes, surface-enhanced Raman scattering, ... Deep ultraviolet enhanced wet chemical etching of gallium nitride. Appl. Phys. Lett., 72 (1998), pp. 939-941. View in Scopus Google Scholar [8]

Gallium nitride (GaN) nanoparticles are successfully synthesized via an improved microwave plasma-enhanced (MPE)CVD method. Optimization of the MPECVD process is achieved by manipulating the plasma operating conditions, such as antenna length, input power, and pressure. The resulting GaN nanoparticles have an average …

Gallium nitride (GaN) is widely used in blue-green LEDs, photodetectors, and high-power, high-frequency electronic devices due to its wide direct bandgap, high electron mobility, …

Lanthanoid-doped Gallium Nitride (GaN) integrated into nanophotonic technologies is a promising candidate for room-temperature quantum photon sources for quantum technology applications.

Abstract. Codoping of gallium nitride for improved acceptor ionization has long been theorized; however, reduction to practice proves difficult via growth. Herein, …

Gallium nitride (GaN) is a wide bandgap semiconductor with remarkable chemical and thermal stability, making it a competitive candidate for a variety of optoelectronic applications. In this study, GaN films are grown using a plasma-enhanced atomic layer deposition (PEALD) with trimethylgallium (TMG) and NH 3 plasma.

Here we demonstrate the synthesis of 2D gallium nitride (GaN) via a migration-enhanced encapsulated growth (MEEG) …

Wide-bandgap materials, particularly Gallium Nitride, have emerged as the platform underlying many of the most promising technologies in the high-power and high-frequency domain. However, GaN p-channel devices lag far behind their popular n-channel counterparts, due to lower mobilities as well as difficulties in doping and forming ohmic …

Gallium nitride (GaN) is a wide bandgap (3.4 eV, absorption edge 365 nm) semiconductor with an atomic displacement energy of 19 eV (20.5 eV for gallium and …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the fabrication of power devices. Among the semiconductors for which power devices are already available in the market, GaN has the widest energy gap, the largest critical field, and the highest saturation velocity, thus representing an excellent material …

Our experiments demonstrate state-of-the-art thermoelectric power factors and thermoelectric figures of merit ~4x better than doped III-nitride materials. These properties can enable a monolithic GaN-on-Si micro-thermoelectric generator with a power density of ∼1 mW for 1 cm by 1 cm footprint, which can be used to power an extreme environment ...

@article{osti_22258555, title = {Low-temperature growth of gallium nitride films by inductively coupled-plasma-enhanced reactive magnetron sputtering}, author = {Ni, Chih-Jui and Chau-Nan Hong, Franklin, E-mail: [email protected]}, abstractNote = {Gallium nitride (GaN) films were grown on sapphire substrate by reactive magnetron …

In this work, through chemical vapor deposition (CVD) method, almost indistinguishable planar rose-like ZnO (PRZ) nanostructures could be prepared on the surface of honeycombed gallium nitride (HGaN) after more than ten deposition tests, and then constructed into PRZ/HGaN heterojunction gas sensor. Subsequent gas behaviors …

The sample under investigation in this report is semi-polar gallium nitride on a sapphire substrate. The crystal structure of c-plane GaN is shown in Fig. 1(a), where the shaded plane represents the [11 2 ¯ 2] plane, which forms the sample surface. The sample structure, illustrated in Fig. 1(b), is as follows: Half a micrometer of m-plane GaN …

Gallium nitride (GaN) is a wide bandgap (3.4 eV, absorption edge 365 nm) semiconductor with an atomic displacement energy of 19 eV (20.5 eV for gallium and 10.8 eV for nitrogen) which is much larger than that of silicon (13 eV). 3,4 Experimentally, GaN-based electronics have shown a high tolerance for gamma (60 Co source, total ionizing …

Gallium nitride (GaN) is an important wide band gap semiconductor that has many applications in optoelectronics1,2 and high power electronics.3,4 However, bulk GaN single crystals are not easily produced using conventional methods.5 GaN devices rely on GaN heteroepitaxy on other substrates.6 This situation increases the importance of …

We present a portfolio of manufacturable, high power Gallium Nitride (GaN) RF power technologies, demonstrating both an improved 2nd generation linear variant and qualified operation at 65V. To the best of our knowledge, this is the first solid state RF technology qualified for reliable operation at 65V. Furthermore, the 2nd generation linear …